AUIRFN8401TR

Obsolete

Infineon Technologies

MOSFET N-CH 40V 84A PQFN

Search across all available documentation for this part.

Obsolete

Infineon Technologies

MOSFET N-CH 40V 84A PQFN

Technical Specifications

Parameters and characteristics for this part

Specification	AUIRFN8401TR

Current - Continuous Drain (Id) @ 25°C	84 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	66 nC
Input Capacitance (Ciss) (Max) @ Vds	2170 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	63 W, 4.2 W
Rds On (Max) @ Id, Vgs	4.6 mOhm
Supplier Device Package	PQFN (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Power Dissipation (Max)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Technology	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Package / Case
Infineon Technologies AUIRFN8401TR	4.2 W 63 W	PQFN (5x6)	-55 °C	175 ░C	40 V	Surface Mount	20 V	84 A	10 V	4.6 mOhm	66 nC	MOSFET (Metal Oxide)	N-Channel	2170 pF	8-PowerTDFN

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 40 V 84A (Tc) 4.2W (Ta), 63W (Tc) Surface Mount PQFN (5x6)

Technical documentation and resources