STFU13N60M2

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STMicroelectronics

N-CHANNEL 600 V, 0.35 OHM TYP., 11 A MDMESH M2 POWER MOSFET IN TO-220FP ULTRA NARROW LEADS PACKAGE

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STFU13N60M2

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STMicroelectronics

N-CHANNEL 600 V, 0.35 OHM TYP., 11 A MDMESH M2 POWER MOSFET IN TO-220FP ULTRA NARROW LEADS PACKAGE

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STFU13N60M2

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC
Input Capacitance (Ciss) (Max) @ Vds	580 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	25 W
Rds On (Max) @ Id, Vgs	380 mOhm
Supplier Device Package	TO-220FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

STFU13N65M2 Series

N-channel 650 V, 370 mOhm typ., 10 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package

Part	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Supplier Device Package	Vgs(th) (Max) @ Id	Mounting Type	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	FET Type	Package / Case	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature
STMicroelectronics STFU13N60M2	25 W	600 V	TO-220FP	4 V	Through Hole	MOSFET (Metal Oxide)	11 A	25 V	-55 °C	150 °C	580 pF	17 nC	N-Channel	TO-220-3 Full Pack	380 mOhm	10 V
STMicroelectronics STFU13N65M2	25 W	650 V	TO-220FP	4 V	Through Hole	MOSFET (Metal Oxide)	10 A	25 V			590 pF	17 nC	N-Channel	TO-220-3 Full Pack	430 mOhm	10 V	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1000	$ 0.78

Description

General part information

STFU13N65M2 Series

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.

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Technical documentation and resources