IPD50R520CPATMA1

Obsolete

Infineon Technologies

LOW POWER_LEGACY

Search across all available documentation for this part.

Obsolete

Infineon Technologies

LOW POWER_LEGACY

Technical Specifications

Parameters and characteristics for this part

Specification	IPD50R520CPATMA1

Current - Continuous Drain (Id) @ 25°C	7.1 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC
Input Capacitance (Ciss) (Max) @ Vds	680 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	66 W
Rds On (Max) @ Id, Vgs [Max]	520 mOhm
Supplier Device Package	PG-TO252-3-313
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	FET Type	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Package / Case	Supplier Device Package	Technology	Input Capacitance (Ciss) (Max) @ Vds
Infineon Technologies IPD50R520CPATMA1	500 V	10 V	20 V	66 W	3.5 V	N-Channel	17 nC	Surface Mount	-55 °C	150 °C	7.1 A	520 mOhm	DPAK (2 Leads + Tab) SC-63 TO-252-3	PG-TO252-3-313	MOSFET (Metal Oxide)	680 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 500 V 7.1A (Tc) 66W (Tc) Surface Mount PG-TO252-3-313

Technical documentation and resources

No documents available