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TLE7269GXUMA3

Infineon Technologies

THE TLE7269G IS A TRANSCEIVER FOR THE LOCAL INTERCONNECT NETWORK (LIN) WITH INTEGRATED WAKE-UP AND PROTECTION FEATURES.

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TLE7269GXUMA3

Infineon Technologies

THE TLE7269G IS A TRANSCEIVER FOR THE LOCAL INTERCONNECT NETWORK (LIN) WITH INTEGRATED WAKE-UP AND PROTECTION FEATURES.

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationTLE7269GXUMA3
Data Rate20 kBd
DuplexFull
Mounting TypeSurface Mount
Number of Drivers/Receivers [custom]2
Number of Drivers/Receivers [custom]2
Package / Case14-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
ProtocolLINbus
Receiver Hysteresis300 mV
Supplier Device PackagePG-DSO-14-62
TypeTransceiver
Voltage - Supply [Max]27 V
Voltage - Supply [Min]7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 2500$ 1.63
5000$ 1.56

Description

General part information

TLE7269 Series

It is designed for in-vehicle networks using data transmission rates from 2.4 kBaud to 20 kBaud. The TLE7269G functions as a bus driver between the protocol controller and the physical bus inside the LIN network. Compliant to all LIN standards and with a wide operational supply range the TLE7269G can be used in all automotive applications. Two stand-alone LIN transceivers are integrated on one monolithic circuit inside TLE7269G. Both transceivers offer different operation modes and separate INH outputs to control external circuitry, like voltage regulators. In Sleep-mode the TLE7269G draws less than 10 mA of quiescent current for both integrated LIN Transceivers, while both transceivers are still able to wake up off of LIN bus traffic or the local Wake-Up input. The very low leakage current on the BUS pins makes the TLE7269G especially suitable for partially supplied networks and supports the low quiescent current requirements of the LIN network. Based on the Infineon Smart Power Technology SPT®, the TLE7269G provides excellent ESD robustness together with a very high electromagnetic immunity (EMI). The TLE7269G reaches a very low level of electromagnetic emission (EME) within a broad frequency range and independent from the battery voltage. The Infineon Smart Power Technology SPT® allows bipolar and CMOS control circuitry in accordance with DMOS power devices to exist on the same monolithic circuit. The TLE7269G and the Infineon SPT® technology are AEC qualified and tailored to withstand the harsh conditions of the Automotive Environment.

Documents

Technical documentation and resources