IXFT40N30Q

Obsolete

IXYS

MOSFET N-CH 300V 40A TO268

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Obsolete

IXYS

MOSFET N-CH 300V 40A TO268

Technical Specifications

Parameters and characteristics for this part

Specification	IXFT40N30Q

Drain to Source Voltage (Vdss)	300 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	140 nC
Input Capacitance (Ciss) (Max) @ Vds	3100 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D3PAK (2 Leads + Tab), TO-268AA, TO-268-3
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs	80 mOhm
Supplier Device Package	TO-268AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	4 V

Part	FET Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Vgs (Max)	Vgs(th) (Max) @ Id [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Technology	Drive Voltage (Max Rds On, Min Rds On)	Package / Case
IXYS IXFT40N30Q	N-Channel	TO-268AA	140 nC	-55 °C	150 °C	300 V	300 W	80 mOhm	20 V	4 V	Surface Mount	3100 pF	MOSFET (Metal Oxide)	10 V	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA
IXYS IXFT40N30Q TR	N-Channel	TO-268HV (IXFT)	140 nC	-55 °C	150 °C	300 V	300 W	85 mOhm	20 V	4 V	Surface Mount	3560 pF	MOSFET (Metal Oxide)	10 V	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 300 V 40A (Tc) 300W (Tc) Surface Mount TO-268AA

Technical documentation and resources