IDH05SG60CXKSA1

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Infineon Technologies

DIODE SIL CARB 600V 5A TO220-2-2

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Infineon Technologies

DIODE SIL CARB 600V 5A TO220-2-2

Technical Specifications

Parameters and characteristics for this part

Specification	IDH05SG60CXKSA1

Capacitance @ Vr, F	110 pF
Current - Average Rectified (Io)	5 A
Current - Reverse Leakage @ Vr	30 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	PG-TO220-2-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	2.3 V

Part	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Capacitance @ Vr, F	Package / Case	Reverse Recovery Time (trr)	Technology	Current - Reverse Leakage @ Vr	Speed	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]
Infineon Technologies IDH05SG60CXKSA1	5 A	2.3 V	Through Hole	175 ░C	-55 C	110 pF	TO-220-2	0 ns	SiC (Silicon Carbide) Schottky	30 µA	No Recovery Time	PG-TO220-2-2	600 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 5A Through Hole PG-TO220-2-2

Technical documentation and resources