IXFR80N50P

Active

LITTELFUSE

TRANS MOSFET N-CH SI 500V 45A 3-PIN(3+TAB) ISOPLUS 247

IXFR80N50P

Active

LITTELFUSE

TRANS MOSFET N-CH SI 500V 45A 3-PIN(3+TAB) ISOPLUS 247

Description Specifications Series Pricing CAD Documents

Description

General part information

IXFR80 Series

The Q3-Class series Power MOSFETs provide the end-user with a broad range of devices that demonstrate exceptional power switching performance, excellent thermal characteristics, enhanced device ruggedness, and high energy efficiency. Available with drain-to-source voltage ratings of 200V–1000V and drain current ratings of 10A–100A, the Q3-Class series features an optimized combination of low on-state resistance (Rdson) and gate charge (Qg), resulting in a substantial reduction in both the conduction and switching loss of the device. Power switching capabilities and device ruggedness are further enhanced through the utilization of our proven HiPerFETTM process, yielding a device with a fast intrinsic rectifier which provides for low reverse recovery charge (Qrr) while enhancing the commutating dV/dt ratings (up to 50V/ns) of the device. Advantages: Easy to Mount High Power Density Space savings

Technical Specifications

Parameters and characteristics for this part

Specification	IXFR80N50P

Current - Continuous Drain (Id) (Tc)	45 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	197 nC
Input Capacitance (Ciss) (Max)	12700 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-247-3
Package Name	ISOPLUS247™
Power Dissipation (Max)	360 W
Rds On (Max)	72 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	5 V

IXFR80 Series

DiscMosfetN-CH HiPerFET-Polar ISOPLUS247

Part	Technology	Drain to Source Voltage (Vdss)	FET Type	Gate Charge (Max)	Vgs(th) (Max)	Vgs (Max)	Mounting Type	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Package Name	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max)	Package / Case	Rds On (Max)	Current - Continuous Drain (Id) (Tc)
LITTELFUSE IXFR80N50P	MOSFET (Metal Oxide)	500 V	N-Channel	197 nC	5 V	30 V	Through Hole	360 W	-55 °C	150 °C	ISOPLUS247™	10 V	12700 pF	TO-247-3	72 mOhm	45 A
LITTELFUSE IXFR80N60P3	MOSFET (Metal Oxide)	600 V	N-Channel	190 nC	5 V	30 V	Through Hole	540 W	-55 °C	150 °C	ISOPLUS247™	10 V	13100 pF	TO-247-3	76 mOhm	48 A
LITTELFUSE IXFR80N50Q3	MOSFET (Metal Oxide)	500 V	N-Channel	200 nC	6.5 V	30 V	Through Hole	570 W	-55 °C	150 °C	ISOPLUS247™	10 V	10000 pF	TO-247-3	72 mOhm	50 A
LITTELFUSE IXFR80N50Q3	MOSFET (Metal Oxide)	500 V	N-Channel	200 nC	6.5 V	30 V	Through Hole	570 W	-55 °C	150 °C	ISOPLUS247™	10 V	10000 pF	TO-247-3	72 mOhm	50 A
LITTELFUSE IXFR80N10Q	MOSFET (Metal Oxide)	100 V	N-Channel	180 nC		20 V	Through Hole	310 W	-55 °C	150 °C	ISOPLUS247™	10 V	4500 pF	TO-247-3	15 mOhm	76 A
LITTELFUSE IXFR80N50P	MOSFET (Metal Oxide)	500 V	N-Channel	197 nC	5 V	30 V	Through Hole	360 W	-55 °C	150 °C	ISOPLUS247™	10 V	12700 pF	TO-247-3	72 mOhm	45 A
LITTELFUSE IXFR80N20Q	MOSFET (Metal Oxide)	200 V	N-Channel	180 nC	4 V	20 V	Through Hole	310 W	-55 °C	150 °C	ISOPLUS247™	10 V	4600 pF	TO-247-3	28 mOhm	71 A
LITTELFUSE IXFR80N60P3	MOSFET (Metal Oxide)	600 V	N-Channel	190 nC	5 V	30 V	Through Hole	540 W	-55 °C	150 °C	ISOPLUS247™	10 V	13100 pF	TO-247-3	76 mOhm	48 A
LITTELFUSE IXFR80N15Q	MOSFET (Metal Oxide)	150 V	N-Channel	180 nC	4 V	20 V	Through Hole	310 W	-55 °C	150 °C	ISOPLUS247™	10 V	4600 pF	TO-247-3	22.5 mOhm	75 A

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

Product Change Notice EN

IXFR80N50P | Datasheet

UR_QQQX2_E72873_20171208

UR_QQQX2_E153432_20180829

Datasheet