2ED2109S06FXUMA1
ActiveTHE 2ED2109S06F IS A 650 V 0.7 A HALF-BRIDGE HIGH SPEED POWER MOSFET AND IGBT GATE DRIVER IN DSO-8 PACKAGE
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2ED2109S06FXUMA1
ActiveTHE 2ED2109S06F IS A 650 V 0.7 A HALF-BRIDGE HIGH SPEED POWER MOSFET AND IGBT GATE DRIVER IN DSO-8 PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | 2ED2109S06FXUMA1 |
|---|---|
| Channel Type | Synchronous |
| Current - Peak Output (Source, Sink) [custom] | 700 mA |
| Current - Peak Output (Source, Sink) [custom] | 290 mA |
| Driven Configuration | Half-Bridge |
| Gate Type | N-Channel MOSFET, IGBT |
| High Side Voltage - Max (Bootstrap) [Max] | 650 V |
| Input Type | Non-Inverting |
| Logic Voltage - VIL, VIH [custom] | 1.1 V |
| Logic Voltage - VIL, VIH [custom] | 1.7 V |
| Mounting Type | Surface Mount |
| Number of Drivers | 1 |
| Operating Temperature [Max] | 125 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Rise / Fall Time (Typ) [custom] | 35 ns |
| Rise / Fall Time (Typ) [custom] | 100 ns |
| Supplier Device Package | PG-DSO-8-53 |
| Voltage - Supply [Max] | 20 V |
| Voltage - Supply [Min] | 10 VDC |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.36 | |
| 10 | $ 1.22 | |||
| 25 | $ 1.16 | |||
| 100 | $ 0.95 | |||
| 250 | $ 0.89 | |||
| 500 | $ 0.78 | |||
| 1000 | $ 0.62 | |||
| Digi-Reel® | 1 | $ 1.36 | ||
| 10 | $ 1.22 | |||
| 25 | $ 1.16 | |||
| 100 | $ 0.95 | |||
| 250 | $ 0.89 | |||
| 500 | $ 0.78 | |||
| 1000 | $ 0.62 | |||
| Tape & Reel (TR) | 2500 | $ 0.58 | ||
| 5000 | $ 0.55 | |||
| 12500 | $ 0.53 | |||
Description
General part information
2ED2109 Series
2ED2109S06FXUMA1 is a 650V half-bridge gate driver with an integrated bootstrap diode. It is a high voltage, high-speed power MOSFET and IGBT driver with independent high and low side referenced output channels. There are not any parasitic thyristor structures present in the device, hence no parasitic latch-up may occur at all temperature and voltage conditions. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET, SiC MOSFET, or IGBT in the high-side configuration, which operates up to 650V.
Documents
Technical documentation and resources