BSS192PH6327XTSA1

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Infineon Technologies

MOSFET P-CH 250V 190MA SOT89

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Infineon Technologies

MOSFET P-CH 250V 190MA SOT89

Technical Specifications

Parameters and characteristics for this part

Specification	BSS192PH6327XTSA1

Current - Continuous Drain (Id) @ 25°C	190 mA
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	2.8 V, 10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	6.1 nC
Input Capacitance (Ciss) (Max) @ Vds	104 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-243AA
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	12 Ohm
Supplier Device Package	PG-SOT89
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Supplier Device Package	Vgs(th) (Max) @ Id	FET Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type
Infineon Technologies BSS192PH6327XTSA1	12 Ohm	1 W	250 V	6.1 nC	104 pF	TO-243AA	MOSFET (Metal Oxide)	2.8 V 10 V	20 V	PG-SOT89	2 V	P-Channel	190 mA	-55 °C	150 °C	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 250 V 190mA (Ta) 1W (Ta) Surface Mount PG-SOT89

Technical documentation and resources