TSM038N03PQ33 RGG

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Taiwan Semiconductor Corporation

MOSFET N-CH 30V 78A 8PDFN

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Taiwan Semiconductor Corporation

MOSFET N-CH 30V 78A 8PDFN

Technical Specifications

Parameters and characteristics for this part

Specification	TSM038N03PQ33 RGG

Current - Continuous Drain (Id) @ 25°C	78 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	25 nC
Input Capacitance (Ciss) (Max) @ Vds	2557 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power Dissipation (Max)	39 W
Rds On (Max) @ Id, Vgs	3.8 mOhm
Supplier Device Package	8-PDFN (3.1x3.1)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Technology	Mounting Type	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)
Taiwan Semiconductor Corporation TSM038N04LCP ROG	DPAK (2 Leads + Tab) SC-63 TO-252-3	5509 pF	N-Channel	-55 °C	150 °C	135 A	TO-252 (DPAK)	MOSFET (Metal Oxide)	Surface Mount	2.5 V	3.8 mOhm	104 nC	4.5 V 10 V	20 V	125 W	40 V
Taiwan Semiconductor Corporation TSM038N03PQ33 RGG	8-PowerWDFN	2557 pF	N-Channel	-55 °C	150 °C	78 A	8-PDFN (3.1x3.1)	MOSFET (Metal Oxide)	Surface Mount	2.5 V	3.8 mOhm	25 nC	4.5 V 10 V	20 V	39 W	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 78A (Tc) 39W (Tc) Surface Mount 8-PDFN (3.1x3.1)

Technical documentation and resources