HN2C01FEYTE85LF

Obsolete

Toshiba Semiconductor and Storage

TRANS 2NPN 50V 0.15A ES6

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Obsolete

Toshiba Semiconductor and Storage

TRANS 2NPN 50V 0.15A ES6

Technical Specifications

Parameters and characteristics for this part

Specification	HN2C01FEYTE85LF

Current - Collector (Ic) (Max) [Max]	150 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	60 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-666, SOT-563
Power - Max [Max]	100 mW
Supplier Device Package	ES6
Transistor Type	2 NPN (Dual)
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Operating Temperature	Package / Case	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Mounting Type	Frequency - Transition
Toshiba Semiconductor and Storage HN2C01FEYTE85LF	120	100 nA	50 V	150 mA	ES6	150 °C	SOT-563 SOT-666	100 mW	250 mV	2 NPN (Dual)	Surface Mount	60 MHz

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General part information

Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 150mA 60MHz 100mW Surface Mount ES6

Technical documentation and resources

No documents available