RN1510(TE85L,F)

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Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.3W SMV

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Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.3W SMV

Technical Specifications

Parameters and characteristics for this part

Specification	RN1510(TE85L,F)

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
Package / Case	SC-74A, SOT-753
Power - Max [Max]	300 mW
Resistor - Base (R1)	4.7 kOhms
Supplier Device Package	SMV
Transistor Type	2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Resistor - Base (R1)	Frequency - Transition	Transistor Type	Mounting Type	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Package / Case	Supplier Device Package
Toshiba Semiconductor and Storage RN1510(TE85L,F)	50 V	100 mA	100 nA	4.7 kOhms	250 MHz	2 NPN - Pre-Biased (Dual) (Emitter Coupled)	Surface Mount	300 mW	120	300 mV	SC-74A SOT-753	SMV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 250MHz 300mW Surface Mount SMV

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