APTC80DSK15T3G

Obsolete

Microsemi Corporation

MOSFET 2N-CH 800V 28A SP3

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Obsolete

Microsemi Corporation

MOSFET 2N-CH 800V 28A SP3

Technical Specifications

Parameters and characteristics for this part

Specification	APTC80DSK15T3G

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	28 A
Drain to Source Voltage (Vdss)	800 V
Gate Charge (Qg) (Max) @ Vgs	180 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	4507 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	SP3
Power - Max [Max]	277 W
Rds On (Max) @ Id, Vgs	150 mOhm
Supplier Device Package	SP3
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3.9 V

Part	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Configuration	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds
Microsemi Corporation APTC80DSK15T3G	MOSFET (Metal Oxide)	150 °C	-40 °C	Chassis Mount	2 N-Channel (Dual)	SP3	4507 pF	277 W	180 nC	3.9 V	150 mOhm	800 V	28 A	SP3
Microsemi Corporation APTC80DDA29T3G	MOSFET (Metal Oxide)	150 °C	-40 °C	Chassis Mount	2 N-Channel (Dual)	SP3		156 W	90 nC	3.9 V	290 mOhm	800 V	15 A	SP3	2254 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 800V 28A 277W Chassis Mount SP3

Technical documentation and resources

No documents available