IXTH22N50P

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IXYS

MOSFET N-CH 500V 22A TO247

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IXYS

MOSFET N-CH 500V 22A TO247

Technical Specifications

Parameters and characteristics for this part

Specification	IXTH22N50P

Current - Continuous Drain (Id) @ 25°C	22 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	50 nC
Input Capacitance (Ciss) (Max) @ Vds	2630 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	350 W
Rds On (Max) @ Id, Vgs	270 mOhm
Supplier Device Package	TO-247 (IXTH)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5.5 V

Part	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Drain to Source Voltage (Vdss)	FET Type
IXYS IXTH22N50P	TO-247 (IXTH)	2630 pF	350 W	22 A	TO-247-3	5.5 V	270 mOhm	Through Hole	50 nC	30 V	10 V	-55 °C	150 °C	MOSFET (Metal Oxide)	500 V	N-Channel

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General part information

N-Channel 500 V 22A (Tc) 350W (Tc) Through Hole TO-247 (IXTH)

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