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2SB1188T100Q

2SB1188T100Q

NRND
Rohm Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, 32 V, 2 A, 500 MW, SOT-89, SURFACE MOUNT

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2SB1188T100Q

2SB1188T100Q

NRND
Rohm Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, 32 V, 2 A, 500 MW, SOT-89, SURFACE MOUNT

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Description

General part information

2SB1188 Series

The 2SB1188T100Q is a -2A PNP medium-power epitaxial planar Silicon Transistor offers low collector to emitter saturation voltage.

Technical Specifications

Parameters and characteristics for this part

Specification2SB1188T100Q
Current - Collector (Ic) (Max)2 A
Current - Collector Cutoff (Max)1 µA
DC Current Gain (hFE) (Min)120
Frequency - Transition100 MHz
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseTO-243AA
Package NameMPT3
Power - Max2 VA
Transistor TypePNP
Vce Saturation (Max)800 mV
Voltage - Collector Emitter Breakdown (Max)32 V

Pricing

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CAD

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Documents

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