
2SB1188T100Q
NRNDRohm Semiconductor
BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, 32 V, 2 A, 500 MW, SOT-89, SURFACE MOUNT

2SB1188T100Q
NRNDRohm Semiconductor
BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, 32 V, 2 A, 500 MW, SOT-89, SURFACE MOUNT
Description
General part information
2SB1188 Series
The 2SB1188T100Q is a -2A PNP medium-power epitaxial planar Silicon Transistor offers low collector to emitter saturation voltage.
Technical Specifications
Parameters and characteristics for this part
| Specification | 2SB1188T100Q |
|---|---|
| Current - Collector (Ic) (Max) | 2 A |
| Current - Collector Cutoff (Max) | 1 µA |
| DC Current Gain (hFE) (Min) | 120 |
| Frequency - Transition | 100 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | TO-243AA |
| Package Name | MPT3 |
| Power - Max | 2 VA |
| Transistor Type | PNP |
| Vce Saturation (Max) | 800 mV |
| Voltage - Collector Emitter Breakdown (Max) | 32 V |
Pricing
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