IAUC90N10S5N062ATMA1

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Infineon Technologies

INFINEON’S IAUC90N10S5N062 OPTIMOS™-5 POWER MOSFET FOR AUTOMOTIVE, AEC Q101, 175°C, ROHS. FIND DATA SHEET, PARAMETERS AND ORDERING INFORMATION.

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Infineon Technologies

INFINEON’S IAUC90N10S5N062 OPTIMOS™-5 POWER MOSFET FOR AUTOMOTIVE, AEC Q101, 175°C, ROHS. FIND DATA SHEET, PARAMETERS AND ORDERING INFORMATION.

Technical Specifications

Parameters and characteristics for this part

Specification	IAUC90N10S5N062ATMA1

Current - Continuous Drain (Id) @ 25°C	90 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	36 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	3275 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	115 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	6.2 mOhm
Supplier Device Package	PG-TDSON-8-34
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.8 V

Part	Rds On (Max) @ Id, Vgs	Mounting Type	Grade	Drain to Source Voltage (Vdss)	Package / Case	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Qualification	Vgs (Max)	Vgs(th) (Max) @ Id	Technology	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package
Infineon Technologies IAUC90N10S5N062ATMA1	6.2 mOhm	Surface Mount	Automotive	100 V	8-PowerTDFN	115 W	36 nC	AEC-Q101	20 V	3.8 V	MOSFET (Metal Oxide)	N-Channel	-55 °C	175 ░C	90 A	6 V 10 V	3275 pF	PG-TDSON-8-34

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 90A (Tc) 115W (Tc) Surface Mount PG-TDSON-8-34

Technical documentation and resources