IPB024N10N5ATMA1
ActiveOPTIMOS™ 5 N-CHANNEL POWER MOSFET 100 V ; D2PAK 7PIN TO-263 7PIN PACKAGE; 2.4 MOHM;
Deep-Dive with AI
Search across all available documentation for this part.
IPB024N10N5ATMA1
ActiveOPTIMOS™ 5 N-CHANNEL POWER MOSFET 100 V ; D2PAK 7PIN TO-263 7PIN PACKAGE; 2.4 MOHM;
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IPB024N10N5ATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 180 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 138 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 10200 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (7 Leads + Tab), TO-263-8, TO-263CA |
| Power Dissipation (Max) [Max] | 250 W |
| Rds On (Max) @ Id, Vgs | 2.4 mOhm |
| Supplier Device Package | PG-TO263-7 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPB024 Series
OptiMOS™ 5 100Vpower MOSFET IPB024N10N5 from Infineon is especially designed for synchronous rectification intelecomblocks including Or-ing, hotswap and battery protection as well as forserver power supplyapplications. The device has a lower RDS(on)of 22% compared to similar devices , one of the biggest contributors to this industry leading FOM is the low on-state resistance providing the highest level of power density and efficiency.