D2601NH90TXPSA1

Obsolete

Infineon Technologies

DIODE GEN PURP 9KV 1790A

Search across all available documentation for this part.

Obsolete

Infineon Technologies

DIODE GEN PURP 9KV 1790A

Technical Specifications

Parameters and characteristics for this part

Specification	D2601NH90TXPSA1

Current - Average Rectified (Io)	1790 A
Current - Reverse Leakage @ Vr	150 mA
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	140 °C
Operating Temperature - Junction [Min]	0 °C
Package / Case	DO-200AE
Speed	Standard Recovery >500ns
Speed	200 mA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	9000 V
Voltage - Forward (Vf) (Max) @ If	5.5 V

Part	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Speed	Speed	Package / Case	Voltage - Forward (Vf) (Max) @ If	Technology
Infineon Technologies D2601NH90TXPSA1	0 °C	140 °C	Chassis Mount	9000 V	1790 A	150 mA	Standard Recovery >500ns	200 mA	DO-200AE	5.5 V	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 9000 V 1790A Chassis Mount

Technical documentation and resources