IPB072N15N3GE8187ATMA1

Obsolete

Infineon Technologies

MOSFET N-CH 150V 100A TO263-3

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Obsolete

Infineon Technologies

MOSFET N-CH 150V 100A TO263-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPB072N15N3GE8187ATMA1

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	8 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	93 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs	7.2 mOhm
Supplier Device Package	PG-TO263-3-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Package / Case	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Vgs (Max)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	FET Type	Technology	Mounting Type
Infineon Technologies IPB072N15N3GE8187ATMA1	4 V	100 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	300 W	8 V 10 V	93 nC	-55 °C	175 ░C	PG-TO263-3-2	20 V	7.2 mOhm	150 V	N-Channel	MOSFET (Metal Oxide)	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 150 V 100A (Tc) 300W (Tc) Surface Mount PG-TO263-3-2

Technical documentation and resources