DMT26M0LDG-13
ActiveDiodes Inc
ASYMMETRIC DUAL N-CHANNEL MOSFET
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DMT26M0LDG-13
ActiveDiodes Inc
ASYMMETRIC DUAL N-CHANNEL MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMT26M0LDG-13 |
|---|---|
| Configuration | 2 N-Channel (Dual) Asymmetrical |
| Current - Continuous Drain (Id) @ 25°C | 52.6 A, 11.6 A, 33.8 A, 20.1 A |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 57.4 nC, 15.9 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1010 pF, 4016 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerVDFN |
| Power - Max | 1.24 W |
| Rds On (Max) @ Id, Vgs | 6 mOhm, 2 mOhm |
| Supplier Device Package | PowerDI3333-8 (Type F) |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.2 V, 2.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 3000 | $ 0.51 | |
| 6000 | $ 0.49 | |||
| 15000 | $ 0.47 | |||
Description
General part information
DMT26M0LDG Series
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
Documents
Technical documentation and resources