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JAN2N4150

JAN2N4150

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Microchip Technology

NPN SILICON POWER SWITCHING 70V TO 120V, 10A

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JAN2N4150

JAN2N4150

Active
Microchip Technology

NPN SILICON POWER SWITCHING 70V TO 120V, 10A

Find alt

Description

General part information

JAN2N4150-Transistor Series

This specification covers the performance requirements for NPN, silicon, low-power, high voltage radiation hardened 2N4150, 2N5237 and 2N5238 transistors. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/394. Two levels of product assurance are provided for each unencapsulated device type (JANHC and JANKC). Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANHC and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

Technical Specifications

Parameters and characteristics for this part

SpecificationJAN2N4150
Current - Collector (Ic) (Max)10 A
Current - Collector Cutoff (Max)10 µA
DC Current Gain (hFE) (Min)40
GradeMilitary
Mounting TypeThrough Hole
Operating Temperature (Max)200 °C
Operating Temperature (Min)-65 °C
Package / CaseTO-5-3 Metal Can, TO-205AA
Package NameTO-5
Power - Max1 VA
QualificationMIL-PRF-19500, 394
Transistor TypeNPN
Vce Saturation (Max)2.5 V
Voltage - Collector Emitter Breakdown (Max)70 V

Pricing

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