AUIRF7343Q

Obsolete

Infineon Technologies

MOSFET N/P-CH 55V 4.7A 8SOIC

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Obsolete

Infineon Technologies

MOSFET N/P-CH 55V 4.7A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	AUIRF7343Q

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	3.4 A, 4.7 A
Drain to Source Voltage (Vdss)	55 V
FET Feature	Logic Level Gate
Input Capacitance (Ciss) (Max) @ Vds [Max]	740 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	50 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Feature	Power - Max [Max]	Technology	Package / Case	Package / Case [y]	Package / Case [x]	Configuration	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Vgs(th) (Max) @ Id	Supplier Device Package	Rds On (Max) @ Id, Vgs
Infineon Technologies AUIRF7343QTR	740 pF	Logic Level Gate	2 W	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	N and P-Channel	55 V	3.4 A 4.7 A	-55 °C	150 °C	Surface Mount	1 V	8-SOIC	50 mOhm
Infineon Technologies AUIRF7343Q	740 pF	Logic Level Gate	2 W	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	N and P-Channel	55 V	3.4 A 4.7 A	-55 °C	150 °C	Surface Mount	1 V	8-SOIC	50 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 55V 4.7A, 3.4A 2W Surface Mount 8-SOIC

Technical documentation and resources