IQDH29NE2LM5CGATMA1

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Infineon Technologies

25 V MOSFET PQFN 5X6MM2 SOURCE DOWN PACKAGE WITH INDUSTRY-LEADING RDS(ON).

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IQDH29NE2LM5CGATMA1

Active

Infineon Technologies

25 V MOSFET PQFN 5X6MM2 SOURCE DOWN PACKAGE WITH INDUSTRY-LEADING RDS(ON).

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IQDH29NE2LM5CGATMA1

Current - Continuous Drain (Id) @ 25°C	75 A, 789 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	17000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	9-PowerTDFN
Power Dissipation (Max)	2.5 W
Power Dissipation (Max)	278 W
Rds On (Max) @ Id, Vgs	0.29 mOhm
Supplier Device Package	PG-TTFN-9-U02
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	2 V

IQDH29 Series

Part	Vgs (Max)	Technology	Package / Case	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Power Dissipation (Max)	FET Type	Rds On (Max) @ Id, Vgs	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]
Infineon Technologies IQDH29NE2LM5CGATMA1	16 V	MOSFET (Metal Oxide)	9-PowerTDFN	25 V	2 V	2.5 W	278 W	N-Channel	0.29 mOhm	Surface Mount	75 A 789 A	-55 °C	150 °C	PG-TTFN-9-U02	4.5 V 10 V	17000 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 3.50
		10	$ 3.15
		25	$ 2.97
		100	$ 2.58
		250	$ 2.45
		500	$ 2.19
		1000	$ 1.85
		2500	$ 1.76
	Digi-Reel®	1	$ 3.50
		10	$ 3.15
		25	$ 2.97
		100	$ 2.58
		250	$ 2.45
		500	$ 2.19
		1000	$ 1.85
		2500	$ 1.76
	Tape & Reel (TR)	5000	$ 1.69
Newark	Each (Supplied on Cut Tape)	1	$ 3.17
		10	$ 2.37
		25	$ 2.17
		50	$ 2.07
		100	$ 1.96
		250	$ 1.85
		500	$ 1.79
		1000	$ 1.74

Description

General part information

IQDH29 Series

The power MOSFET IQDH29NE2LM5CG 25 V comes in a PQFN 5x6 mm2Source-Downpackage. The part offers the industry’s lowest RDS(on)of 0.29 mΩ combined with outstanding thermal performance for easy power loss management. This enables higher system efficiency and power density for a large variety of end applications likeSMPS,telecompower, and intermediate bus conversion in high-performance computing, like hyper-scale data centers and AI-server farms.

Documents

Technical documentation and resources