IXTH1N200P3

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IXYS

MOSFET N-CH 2000V 1A TO247

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IXYS

MOSFET N-CH 2000V 1A TO247

Technical Specifications

Parameters and characteristics for this part

Specification	IXTH1N200P3

Current - Continuous Drain (Id) @ 25°C	1 A
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	23.5 nC
Input Capacitance (Ciss) (Max) @ Vds	646 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	40 Ohm
Supplier Device Package	TO-247 (IXTH)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	FET Type	Technology	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Package / Case	Vgs (Max)	Rds On (Max) @ Id, Vgs
IXYS IXTH1N100	N-Channel	MOSFET (Metal Oxide)	10 V	1000 V	23 nC	11 Ohm	Through Hole	-55 °C	150 °C	60 W	TO-247 (IXTH)	480 pF	1.5 A	4.5 V	TO-247-3	20 V
IXYS IXTH1N200P3	N-Channel	MOSFET (Metal Oxide)	10 V		23.5 nC		Through Hole	-55 °C	150 °C	125 W	TO-247 (IXTH)	646 pF	1 A	4 V	TO-247-3	20 V	40 Ohm

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General part information

N-Channel 2000 V 1A (Tc) 125W (Tc) Through Hole TO-247 (IXTH)

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