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BSC061N08NS5ATMA1 - PG-TDSON-8-7

BSC061N08NS5ATMA1

Active
Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 80 V ; SUPERSO8 5X6 PACKAGE; 6.1 MOHM;

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BSC061N08NS5ATMA1 - PG-TDSON-8-7

BSC061N08NS5ATMA1

Active
Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 80 V ; SUPERSO8 5X6 PACKAGE; 6.1 MOHM;

Technical Specifications

Parameters and characteristics for this part

SpecificationBSC061N08NS5ATMA1
Current - Continuous Drain (Id) @ 25°C82 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)6 V, 10 V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds2500 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)2.5 W
Power Dissipation (Max)74 W
Rds On (Max) @ Id, Vgs6.1 mOhm
Supplier Device PackagePG-TDSON-8-7
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.99
10$ 1.46
100$ 1.12
500$ 0.90
1000$ 0.89
Digi-Reel® 1$ 1.99
10$ 1.46
100$ 1.12
500$ 0.90
1000$ 0.89
Tape & Reel (TR) 5000$ 0.79

Description

General part information

BSC061 Series

OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification fortelecomandserver power supplies. In addition, the device can also be utilized in other industrial applications such assolar,low voltage drivesandadapter. Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on)reduction of up to 43%.