FRS1ME

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Diodes Inc

DIODE GEN PURP 1KV 1A DO219AA TR

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Diodes Inc

DIODE GEN PURP 1KV 1A DO219AA TR

Technical Specifications

Parameters and characteristics for this part

Specification	FRS1ME

Capacitance @ Vr, F	5 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-219AA
Reverse Recovery Time (trr)	500 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-219AA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	1.3 V

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Part	Technology	Reverse Recovery Time (trr)	Package / Case	Mounting Type	Speed	Current - Average Rectified (Io)	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
Diodes Inc FRS1ME	Standard	500 ns	DO-219AA	Surface Mount	200 mA 500 ns	1 A	DO-219AA	1000 V	5 pF	5 µA	1.3 V	150 °C	-55 °C

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General part information

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