IXTH10P50

Obsolete

IXYS

MOSFET P-CH 500V 10A TO247

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Obsolete

IXYS

MOSFET P-CH 500V 10A TO247

Technical Specifications

Parameters and characteristics for this part

Specification	IXTH10P50

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	160 nC
Input Capacitance (Ciss) (Max) @ Vds	4700 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs	900 mOhm
Supplier Device Package	TO-247 (IXTH)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

Part	FET Type	Power Dissipation (Max) [Max]	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Technology	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id
IXYS IXTH10P50	P-Channel	300 W	20 V	-55 °C	150 °C	10 A	TO-247 (IXTH)	10 V	TO-247-3	900 mOhm	500 V	MOSFET (Metal Oxide)	Through Hole	4700 pF	160 nC	5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 500 V 10A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)

Technical documentation and resources