IMW65R107M1HXKSA1

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Infineon Technologies

COOLSIC™ MOSFET 650V – SIC MOSFET DELIVERING RELIABLE AND COST EFFECTIVE PERFORMANCE IN TO247 3–PIN PACKAGE

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IMW65R107M1HXKSA1

Active

Infineon Technologies

COOLSIC™ MOSFET 650V – SIC MOSFET DELIVERING RELIABLE AND COST EFFECTIVE PERFORMANCE IN TO247 3–PIN PACKAGE

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DocumentsDatasheet Technical Data Sheet EN

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IMW65R107M1HXKSA1

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	18 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	15 nC
Input Capacitance (Ciss) (Max) @ Vds	496 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	75 W
Rds On (Max) @ Id, Vgs	142 mOhm
Supplier Device Package	PG-TO247-3-41
Vgs (Max) [Max]	23 V
Vgs (Max) [Min]	-5 V
Vgs(th) (Max) @ Id	5.7 V

IMW65R107 Series

Part	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max) [Max]	Vgs (Max) [Min]	Power Dissipation (Max)
Infineon Technologies IMW65R107M1HXKSA1	N-Channel	496 pF	Through Hole	142 mOhm	20 A	TO-247-3	-55 °C	150 °C	5.7 V	650 V	PG-TO247-3-41	18 V	15 nC	23 V	-5 V	75 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 8.05
		30	$ 4.68
		120	$ 3.94
		510	$ 3.57
Newark	Each	1	$ 8.39
		10	$ 7.65
		25	$ 5.82
		50	$ 5.48
		100	$ 5.13
		480	$ 5.12
		720	$ 4.73

Description

General part information

IMW65R107 Series

CoolSiC™ MOSFETtechnology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device performance, robustness, and ease of use. The IMW65R107M1H CoolSiC™ MOSFET 650V is built on a state-of-the-art trench semiconductor, optimized to allow no compromises in getting both thelowest losses in the applicationand thehighest reliability in operation.This SiC MOSFET comes in a TO247 3-pin package with a cost-effective performance.