
CSD15380F3T
Active20-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE LGA 0.6 MM X 0.7 MM, 1460 MOHM, GATE ESD PROTECTION 3-PICOSTAR -55 TO 150
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CSD15380F3T
Active20-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE LGA 0.6 MM X 0.7 MM, 1460 MOHM, GATE ESD PROTECTION 3-PICOSTAR -55 TO 150
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Technical Specifications
Parameters and characteristics commom to parts in this series
Specification | CSD15380F3T | CSD15380 Series |
---|---|---|
Current - Continuous Drain (Id) @ 25°C | 500 mA | 500 mA |
Drain to Source Voltage (Vdss) | 20 V | 20 V |
Drive Voltage (Max Rds On, Min Rds On) | 8 V, 2.5 V | 2.5 - 8 V |
FET Type | N-Channel | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 0.281 nC | 0.281 nC |
Input Capacitance (Ciss) (Max) @ Vds [Max] | 10.5 pF | 10.5 pF |
Mounting Type | Surface Mount | Surface Mount |
Operating Temperature [Max] | 150 °C | 150 °C |
Operating Temperature [Min] | -55 °C | -55 °C |
Package / Case | 3-XFDFN | 3-XFDFN |
Power Dissipation (Max) [Max] | 500 mW | 500 mW |
Rds On (Max) @ Id, Vgs | 1190 mOhm | 1190 mOhm |
Supplier Device Package | 3-PICOSTAR | 3-PICOSTAR |
Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Vgs (Max) | 10 V | 10 V |
Vgs(th) (Max) @ Id | 1.35 V | 1.35 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Distributor | Package | Quantity | $ | |
---|---|---|---|---|
Arrow Electronics | N/A | 0 | $ 0.31 | |
1 | $ 0.24 | |||
10 | $ 0.24 | |||
25 | $ 0.24 | |||
100 | $ 0.23 | |||
DigiKey | N/A | 1 | $ 1.32 | |
10 | $ 0.83 | |||
100 | $ 0.55 | |||
250 | $ 0.48 | |||
500 | $ 0.43 | |||
750 | $ 0.41 | |||
1250 | $ 0.38 | |||
1750 | $ 0.36 | |||
2500 | $ 0.35 | |||
6250 | $ 0.31 | |||
12500 | $ 0.30 | |||
Digikey | Cut Tape (CT) | 1 | $ 0.91 | |
10 | $ 0.79 | |||
100 | $ 0.55 | |||
Digi-Reel® | 1 | $ 0.91 | ||
10 | $ 0.79 | |||
100 | $ 0.55 | |||
Tape & Reel (TR) | 250 | $ 0.53 | ||
500 | $ 0.46 | |||
1250 | $ 0.39 | |||
2500 | $ 0.35 | |||
6250 | $ 0.33 | |||
12500 | $ 0.30 | |||
25000 | $ 0.30 | |||
Farnell | N/A | 1 | $ 0.89 | |
10 | $ 0.75 | |||
100 | $ 0.68 | |||
100 | $ 0.68 | |||
500 | $ 0.61 | |||
500 | $ 0.61 | |||
1000 | $ 0.55 | |||
1000 | $ 0.55 | |||
5000 | $ 0.48 | |||
5000 | $ 0.48 | |||
Mouser Electronics | N/A | 1 | $ 0.82 | |
10 | $ 0.62 | |||
100 | $ 0.41 | |||
250 | $ 0.41 | |||
500 | $ 0.37 | |||
1000 | $ 0.34 | |||
2500 | $ 0.33 | |||
5000 | $ 0.30 | |||
25000 | $ 0.30 | |||
TME | N/A | 1 | $ 0.76 | |
100 | $ 0.48 | |||
250 | $ 0.44 | |||
1000 | $ 0.41 | |||
Texas Instruments | SMALL T&R | 1 | $ 0.74 | |
100 | $ 0.48 | |||
250 | $ 0.36 | |||
1000 | $ 0.24 | |||
Verical | N/A | 20 | $ 0.23 | |
Win Source Electronics | N/A | 590 | $ 0.08 | |
1260 | $ 0.08 | |||
1960 | $ 0.08 | |||
2810 | $ 0.07 | |||
3650 | $ 0.07 | |||
4560 | $ 0.07 |
CSD15380 Series
20-V, N channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 1460 mOhm, gate ESD protection
Part | Mounting Type | Rds On (Max) @ Id, Vgs | Package / Case | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Technology | Input Capacitance (Ciss) (Max) @ Vds [Max] | Power Dissipation (Max) [Max] | Vgs (Max) | Operating Temperature [Max] | Operating Temperature [Min] | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | FET Type | Vgs(th) (Max) @ Id |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments CSD15380F3T | Surface Mount | 1190 mOhm | 3-XFDFN | 3-PICOSTAR | 500 mA | MOSFET (Metal Oxide) | 10.5 pF | 500 mW | 10 V | 150 °C | -55 °C | 2.5 V, 8 V | 20 V | 0.281 nC | N-Channel | 1.35 V |
Texas Instruments CSD15380F3 | Surface Mount | 1190 mOhm | 3-XFDFN | 3-PICOSTAR | 500 mA | MOSFET (Metal Oxide) | 10.5 pF | 500 mW | 10 V | 150 °C | -55 °C | 2.8 V, 8 V | 20 V | 0.281 nC | N-Channel | 1.35 V |
Description
General part information
CSD15380 Series
This 20-V, 990-mΩ, N-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. Ultra-low capacitance improves switching speeds. When used in data line applications, the low capacitance minimizes noise coupling. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.
This 20-V, 990-mΩ, N-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. Ultra-low capacitance improves switching speeds. When used in data line applications, the low capacitance minimizes noise coupling. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.
Documents
Technical documentation and resources