IXFB80N50Q2

Unknown

IXYS

MOSFET N-CH 500V 80A PLUS264

Search across all available documentation for this part.

Unknown

IXYS

MOSFET N-CH 500V 80A PLUS264

Technical Specifications

Parameters and characteristics for this part

Specification	IXFB80N50Q2

Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	15000 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power Dissipation (Max)	960 W
Rds On (Max) @ Id, Vgs	60 mOhm
Supplier Device Package	PLUS264™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5.5 V

Part	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Vgs(th) (Max) @ Id	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Package / Case	Supplier Device Package	Technology	Power Dissipation (Max)
IXYS IXFB80N50Q2	500 V	10 V	N-Channel	15000 pF	30 V	5.5 V	Through Hole	-55 °C	150 °C	60 mOhm	TO-264-3 TO-264AA	PLUS264™	MOSFET (Metal Oxide)	960 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 500 V 80A (Tc) 960W (Tc) Through Hole PLUS264™

Technical documentation and resources

No documents available