Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | BD911 | BD911 Series |
|---|---|---|
| - | - | |
| Current - Collector (Ic) (Max) [Max] | 15 A | 15 A |
| Current - Collector Cutoff (Max) [Max] | 1 mA | 1 mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 15 hFE | 15 hFE |
| Frequency - Transition | 3 MHz | 3 MHz |
| Mounting Type | Through Hole | Through Hole |
| Operating Temperature | 150 °C | 150 °C |
| Package / Case | TO-220-3 | TO-220-3 |
| Power - Max [Max] | 90 W | 90 W |
| Supplier Device Package | TO-220 | TO-220 |
| Transistor Type | NPN | NPN |
| Vce Saturation (Max) @ Ib, Ic | 3 V | 3 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 100 V | 100 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
BD911 Series
COMPLEMENTARY SILICON POWER TRANSISTORS
| Part | Current - Collector Cutoff (Max) [Max] | Frequency - Transition | Supplier Device Package | Package / Case | Mounting Type | Transistor Type | Power - Max [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] | Vce Saturation (Max) @ Ib, Ic | Operating Temperature | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Current - Collector (Ic) (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics BD911 | ||||||||||||
STMicroelectronics BD911 | ||||||||||||
STMicroelectronics BD911 | ||||||||||||
STMicroelectronics BD911 | 1 mA | 3 MHz | TO-220 | TO-220-3 | Through Hole | NPN | 90 W | 100 V | 3 V | 150 °C | 15 hFE | 15 A |
STMicroelectronics BD911 |
Description
General part information
BD911 Series
The BD909 and BD911 are silicon Epitaxial-Base NPN power transistors mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications.
The complementary PNP types are BD910 and BD912 respectively.