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STW58N65DM2AG - TO-247-3

STW58N65DM2AG

Active
STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 650 V, 0.058 OHM TYP., 48 A MDMESH DM2 POWER MOSFET IN A TO-247 PACKAGE

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Search across all available documentation for this part.

DocumentsDatasheetTN1224+21
STW58N65DM2AG - TO-247-3

STW58N65DM2AG

Active
STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 650 V, 0.058 OHM TYP., 48 A MDMESH DM2 POWER MOSFET IN A TO-247 PACKAGE

Deep-Dive with AI

DocumentsDatasheetTN1224+21

Technical Specifications

Parameters and characteristics for this part

SpecificationSTW58N65DM2AG
Current - Continuous Drain (Id) @ 25°C48 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs88 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds [Max]4100 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max)360 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs65 mOhm
Supplier Device PackageTO-247-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 600$ 6.62
NewarkEach 1$ 11.58

Description

General part information

STW58N65DM2AG Series

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.