2N1131

Obsolete

Microchip Technology

POWER BJT TO-39 ROHS COMPLIANT: YES

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2N1131

Obsolete

Microchip Technology

POWER BJT TO-39 ROHS COMPLIANT: YES

Find alt

Alpha

Description Specifications Series Pricing CAD Documents

Description

General part information

2N1131-Transistor Series

This specification covers the performance requirements for PNP silicon low-power, 2N1131, 2N1131L, 2N1132 and 2N1132L transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/177. 2N1131 and 2N1132 (TO-39), 2N1131L and 2N1132L (TO-5).

Technical Specifications

Parameters and characteristics for this part

Specification	2N1131

Current - Collector (Ic) (Max)	0.6 mA
Current - Collector Cutoff (Max)	10 mA
DC Current Gain (hFE) (Min)	20
Mounting Type	Through Hole
Operating Temperature (Max)	200 °C
Operating Temperature (Min)	-65 °C
Package / Case	TO-39-3 Metal Can, TO-205AD
Package Name	TO-39 (TO-205AD)
Power - Max	0.6 W
Transistor Type	PNP
Vce Saturation (Max)	1.3 V
Voltage - Collector Emitter Breakdown (Max)	40 V

2N1131-Transistor Series

MIL-PRF-19500/177

Part	Power - Max	Vce Saturation (Max)	Voltage - Collector Emitter Breakdown (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Package / Case	Mounting Type	Current - Collector (Ic) (Max)	Current - Collector Cutoff (Max)	Transistor Type	Package Name	DC Current Gain (hFE) (Min)
Microchip Technology 2N1131	0.6 W	1.3 V	40 V	-65 °C	200 °C	TO-205AD TO-39-3 Metal Can	Through Hole	0.6 mA	10 mA	PNP	TO-39 (TO-205AD)	20

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

2N1131 | Datasheet