TP0610T-G

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Microchip Technology

TRANS MOSFET P-CH 60V 0.12A 3-PIN SOT-23

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Microchip Technology

TRANS MOSFET P-CH 60V 0.12A 3-PIN SOT-23

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	TP0610T-G	TP0610 Series

Current - Continuous Drain (Id) @ 25°C	-	120 mA
Drain to Source Voltage (Vdss)	-	60 V
Drive Voltage (Max Rds On, Min Rds On)	-	4.5 - 10 V
FET Type	-	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	-	60 pF
Mounting Type	-	Surface Mount
null		-
Operating Temperature	-	-55 °C
Operating Temperature	-	150 °C
Package / Case	-	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	-	360 mW
Rds On (Max) @ Id, Vgs	-	10 Ohm
Supplier Device Package	-	TO-236AB (SOT23)
Technology	-	MOSFET (Metal Oxide)
Vgs (Max)	-	20 V
Vgs(th) (Max) @ Id	-	2.4 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

TRANS MOSFET P-CH 60V 0.12A 3-PIN SOT-23

Part	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Supplier Device Package	Package / Case	Technology
Microchip Technology TP0610T-G
Microchip Technology TP0610T-G	-55 °C	150 °C	Surface Mount	4.5 V, 10 V	360 mW	P-Channel	120 mA	20 V	10 Ohm	60 V	60 pF	2.4 V	TO-236AB (SOT23)	SC-59, SOT-23-3, TO-236-3	MOSFET (Metal Oxide)

General part information

Low threshold (-2.4V max.)

High input impedance

Low input capacitance (95pF typical)

Technical documentation and resources