STS8DN3LLH5

LTB

STMicroelectronics

DUAL N-CHANNEL 30 V, 0.0155 OHM TYP., 10 A STRIPFET(TM) V POWER MOSFET IN A SO-8 PACKAGE

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STS8DN3LLH5

LTB

STMicroelectronics

DUAL N-CHANNEL 30 V, 0.0155 OHM TYP., 10 A STRIPFET(TM) V POWER MOSFET IN A SO-8 PACKAGE

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Description Specifications Series Pricing CAD Documents

Description

General part information

STS8DN3LLH5 Series

This STripFETV Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM.

Technical Specifications

Parameters and characteristics for this part

Specification	STS8DN3LLH5

Channel Count	2
Configuration	N-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id)	10 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Max)	5.4 nC
Input Capacitance (Ciss) (Max)	724 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Power - Max	2.7 W
Rds On (Max)	19 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	1 V

STS8DN3LLH5 Series

Dual N-channel 30 V, 0.0155 Ohm typ., 10 A STripFET(TM) V Power MOSFET in a SO-8 package

Part	Power - Max	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)	FET Feature	Technology	Package Length	Package Name	Package Width	Mounting Type	Current - Continuous Drain (Id)	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Channel Count	Configuration	Configuration - Features
STMicroelectronics STS8DN3LLH5	2.7 W	1 V	30 V	-55 °C	150 °C	19 mOhm	Logic Level Gate	MOSFET (Metal Oxide)	0.154 in	8-SOIC	3.9 mm	Surface Mount	10 A	724 pF	5.4 nC	2	N-Channel	Dual