STB78NF55-08

Obsolete

STMicroelectronics

MOSFET N-CH 55V 80A D2PAK

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Obsolete

STMicroelectronics

MOSFET N-CH 55V 80A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	STB78NF55-08

Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	155 nC
Input Capacitance (Ciss) (Max) @ Vds	3740 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	300 W
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Technology	Vgs (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Supplier Device Package	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]
STMicroelectronics STB78NF55-08	3740 pF	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	20 V	Surface Mount	155 nC	-55 °C	175 ░C	N-Channel	TO-263 (D2PAK)	4 V	55 V	300 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 55 V 80A (Tc) 300W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources