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STN1NK80Z - SOT223-3L

STN1NK80Z

Active
STMicroelectronics

N-CHANNEL 800 V, 13 OHM TYP., 250 MA SUPERMESH POWER MOSFET IN A SOT-223 PACKAGE

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Search across all available documentation for this part.

DocumentsTN1225+14
STN1NK80Z - SOT223-3L

STN1NK80Z

Active
STMicroelectronics

N-CHANNEL 800 V, 13 OHM TYP., 250 MA SUPERMESH POWER MOSFET IN A SOT-223 PACKAGE

Deep-Dive with AI

DocumentsTN1225+14

Technical Specifications

Parameters and characteristics for this part

SpecificationSTN1NK80Z
Current - Continuous Drain (Id) @ 25°C250 mA
Drain to Source Voltage (Vdss)800 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs7.7 nC
Input Capacitance (Ciss) (Max) @ Vds160 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-261AA, TO-261-4
Power Dissipation (Max)2.5 W
Supplier Device PackageSOT-223
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.21
10$ 0.99
100$ 0.77
500$ 0.65
1000$ 0.53
2000$ 0.50
Digi-Reel® 1$ 1.21
10$ 0.99
100$ 0.77
500$ 0.65
1000$ 0.53
2000$ 0.50
Tape & Reel (TR) 4000$ 0.50
8000$ 0.48
12000$ 0.45
NewarkEach (Supplied on Full Reel) 4000$ 0.66
8000$ 0.65

Description

General part information

STN1NK80Z Series

These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.