STGB3NB60FDT4

Obsolete

STMicroelectronics

IGBT 600V 6A 68W D2PAK

Search across all available documentation for this part.

Obsolete

STMicroelectronics

IGBT 600V 6A 68W D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	STGB3NB60FDT4

Gate Charge	16 nC
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power - Max [Max]	68 W
Reverse Recovery Time (trr)	45 ns
Supplier Device Package	D2PAK
Switching Energy	125 µJ
Td (on/off) @ 25°C	12.5 ns
Td (on/off) @ 25°C	105 ns
Test Condition	10 Ohm, 480 V, 15 V, 3 A
Vce(on) (Max) @ Vge, Ic	2.4 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Test Condition	Switching Energy	Reverse Recovery Time (trr)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Vce(on) (Max) @ Vge, Ic	Package / Case	Gate Charge	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Mounting Type	Td (on/off) @ 25°C	Operating Temperature	Current - Collector Pulsed (Icm)
STMicroelectronics STGB3HF60HD	1.5 A 15 V 100 Ohm 400 V	12 µJ 19 µJ	85 ns	D2PAK	-55 °C	150 °C	11 ns	60 ns	2.95 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	12 nC	7.5 A	600 V	38 W	Surface Mount
STMicroelectronics STGB3NB60SDT4	3 A 15 V 480 V 1000 Ohm	1.15 mJ	1.7 µs	D2PAK					1.5 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	18 nC		600 V	70 W	Surface Mount	3.4 µs 125 ns	175 °C	25 A
STMicroelectronics STGB3NB60FDT4	3 A 10 Ohm 15 V 480 V	125 µJ	45 ns	D2PAK			12.5 ns	105 ns	2.4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	16 nC		600 V	68 W	Surface Mount		150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT 600 V 6 A 68 W Surface Mount D2PAK

Technical documentation and resources