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CSD16323Q3

Active
Texas Instruments

25-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 3 MM X 3 MM, 5.5 MOHM 8-VSON-CLIP -55 TO 150

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CSD16323Q3 - https://ti.com/content/dam/ticom/images/products/package/d/dqg0008a.png

CSD16323Q3

Active
Texas Instruments

25-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 3 MM X 3 MM, 5.5 MOHM 8-VSON-CLIP -55 TO 150

Technical Specifications

Parameters and characteristics commom to parts in this series

SpecificationCSD16323Q3CSD16323 Series
Current - Continuous Drain (Id) @ 25°C60 A, 21 A20 - 105 A
Drain to Source Voltage (Vdss)25 V25 V
Drive Voltage (Max Rds On, Min Rds On)3 V, 8 V3 - 8 V
FET TypeN-ChannelN-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]1300 pF1300 pF
Mounting TypeSurface MountSurface Mount
Operating Temperature [Max]150 °C150 °C
Operating Temperature [Min]-55 °C-55 °C
Package / Case8-PowerTDFN8-PowerTDFN
Power Dissipation (Max)-2.8 - 74 W
Power Dissipation (Max) [Max]3 W3 W
Rds On (Max) @ Id, Vgs4.5 mOhm4.5 mOhm
Supplier Device Package8-VSON-CLIP (3.3x3.3)8-VSON-CLIP (3.3x3.3), 8-SON-EP (3x3)
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)
Vgs (Max)10 V, -8 V-8 - 10 V
Vgs(th) (Max) @ Id1.4 V1.4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
Bristol ElectronicsN/A 6$ 0.94
6$ 0.94
23$ 0.61
23$ 0.61
CHIPMALL.COM LIMITEDN/A 1$ 0.53
5$ 0.53
5$ 0.33
10$ 0.43
30$ 0.38
50$ 0.38
100$ 0.33
150$ 0.33
500$ 0.30
500$ 0.30
1000$ 0.29
2500$ 0.29
DigiKeyN/A 1$ 1.71
1$ 1.36
10$ 1.08
10$ 0.92
100$ 0.72
100$ 0.64
500$ 0.57
500$ 0.52
1000$ 0.52
1000$ 0.48
2500$ 0.47
2500$ 0.47
5000$ 0.44
5000$ 0.44
7500$ 0.42
7500$ 0.42
DigikeyCut Tape (CT) 1$ 1.72
10$ 1.09
100$ 0.73
500$ 0.58
1000$ 0.53
Digi-Reel® 1$ 1.72
10$ 1.09
100$ 0.73
500$ 0.58
1000$ 0.53
Tape & Reel (TR) 2500$ 0.47
5000$ 0.44
7500$ 0.42
FarnellN/A 1$ 1.29
10$ 1.00
100$ 0.70
100$ 0.70
500$ 0.59
500$ 0.59
1000$ 0.52
1000$ 0.52
5000$ 0.46
5000$ 0.46
LCSCN/A 1$ 0.55
1$ 0.55
10$ 0.45
10$ 0.45
30$ 0.40
30$ 0.40
100$ 0.34
100$ 0.34
500$ 0.31
500$ 0.31
1000$ 0.30
1000$ 0.30
Mouser ElectronicsN/A 1$ 1.12
1$ 1.12
10$ 0.92
10$ 0.92
100$ 0.64
100$ 0.64
500$ 0.52
500$ 0.52
1000$ 0.46
1000$ 0.46
2500$ 0.43
2500$ 0.43
5000$ 0.42
5000$ 0.42
NewarkN/A 1$ 1.28
10$ 1.22
25$ 1.16
50$ 1.11
100$ 1.06
250$ 1.03
500$ 1.00
1000$ 0.99
Quest ComponentsN/A 1$ 1.26
1$ 1.25
1$ 1.26
5$ 1.00
5$ 1.00
21$ 0.63
21$ 0.63
317$ 0.51
317$ 0.51
1583$ 0.44
1583$ 0.44
Rochester ElectronicsN/A 1$ 0.47
1$ 0.47
1$ 0.47
25$ 0.46
25$ 0.46
25$ 0.46
100$ 0.44
100$ 0.44
100$ 0.44
500$ 0.42
500$ 0.42
500$ 0.42
1000$ 0.40
1000$ 0.40
1000$ 0.40
Texas InstrumentsLARGE T&R 1$ 0.83
100$ 0.64
250$ 0.47
1000$ 0.34
Win Source ElectronicsN/A 145$ 0.35
145$ 0.35
305$ 0.33
305$ 0.33
470$ 0.32
470$ 0.32
675$ 0.30
675$ 0.30
880$ 0.29
880$ 0.29
1095$ 0.27
1095$ 0.27

CSD16323 Series

PROTOTYPE

PartVgs (Max)Vgs(th) (Max) @ IdSupplier Device PackagePower Dissipation (Max)TechnologyMounting TypeDrain to Source Voltage (Vdss)Package / CaseOperating Temperature [Max]Operating Temperature [Min]Current - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsDrive Voltage (Max Rds On, Min Rds On)Input Capacitance (Ciss) (Max) @ Vds [Max]FET TypePower Dissipation (Max) [Max]
Texas Instruments
CSD16323Q3T
-8 V, 10 V
1.4 V
8-VSON-CLIP (3.3x3.3)
2.8 W, 74 W
MOSFET (Metal Oxide)
Surface Mount
25 V
8-PowerTDFN
150 °C
-55 °C
20 A, 105 A
4.5 mOhm
3 V, 8 V
1300 pF
N-Channel
Texas Instruments
CSD16323Q3
-8 V, 10 V
1.4 V
8-VSON-CLIP (3.3x3.3)
MOSFET (Metal Oxide)
Surface Mount
25 V
8-PowerTDFN
150 °C
-55 °C
21 A, 60 A
4.5 mOhm
3 V, 8 V
1300 pF
N-Channel
3 W
Texas Instruments
CSD16323Q3C
-8 V, 10 V
1.4 V
8-SON-EP (3x3)
MOSFET (Metal Oxide)
Surface Mount
25 V
8-PowerTDFN
150 °C
-55 °C
21 A, 60 A
4.5 mOhm
3 V, 8 V
1300 pF
N-Channel
3 W

Description

General part information

CSD16323 Series

This 25-V, 3.8-mΩ, 3.3 × 3.3-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5-V gate drive applications.

This 25-V, 3.8-mΩ, 3.3 × 3.3-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5-V gate drive applications.