GCMS020B120S1-E1

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DISCRETE SEMICONDUCTOR MODULES SIC 1200V 20MOHM MOSFET & 50A SBD SOT-227

Active

DISCRETE SEMICONDUCTOR MODULES SIC 1200V 20MOHM MOSFET & 50A SBD SOT-227

Description

General part information

N-Channel 1200 V 113A (Tc) 395W (Tc) Chassis Mount SOT-227

Parameters and characteristics for this part

Specification	GCMS020B120S1-E1

Current - Continuous Drain (Id) (Tc)	113 A
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	20 V
FET Type	N-Channel
Gate Charge (Max)	215 nC
Input Capacitance (Ciss) (Max)	5279 pF, 5279 pF
Mounting Type	Chassis Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-227-4, miniBLOC
Package Name	SOT-227
Power Dissipation (Max)	395 W
Rds On (Max)	28 mOhm
Technology	SiC (Silicon Carbide Junction Transistor), SiCFET (Silicon Carbide)
Vgs (Max) Negative	-10 V
Vgs (Max) Positive	25 V
Vgs(th) (Max)	4 V

Part	Technology	Mounting Type	Gate Charge (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs (Max) Negative	Vgs (Max) Positive	FET Type	Input Capacitance (Ciss) (Max)	Package Name	Vgs(th) (Max)	Power Dissipation (Max)	Current - Continuous Drain (Id) (Tc)	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)
SemiQ GCMS020B120S1-E1	SiC (Silicon Carbide Junction Transistor) SiCFET (Silicon Carbide)	Chassis Mount	215 nC	20 V	miniBLOC SOT-227-4	-10 V	25 V	N-Channel	5279 pF 5279 pF	SOT-227	4 V	395 W	113 A	1200 V	-55 °C	175 °C	28 mOhm

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Technical documentation and resources