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MCP6V02T-E/MD

MCP6V02T-E/MD

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Microchip Technology

DUAL, ZERO-DRIFT OP AMP, E TEMP 8 DFN 4X4X0.9MM T/R ROHS COMPLIANT: YES

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MCP6V02T-E/MD

MCP6V02T-E/MD

Active
Microchip Technology

DUAL, ZERO-DRIFT OP AMP, E TEMP 8 DFN 4X4X0.9MM T/R ROHS COMPLIANT: YES

Find alt

Description

General part information

MCP6V02 Series

High DC Precision:VOS Drift: ±50 nV/°C (maximum)VOS: ±2 µV (maximum)AOL: 130 dB (minimum)PSRR: 130 dB (minimum)CMRR: 130 dB (minimum)Eni: 2.5 µVP-P (typical), f = 0.1 Hz to 10 HzEni: 0.79 µVp-p (typical), f = 0.01 Hz to 1 Hz

VOS Drift: ±50 nV/°C (maximum)

VOS: ±2 µV (maximum)

Technical Specifications

Parameters and characteristics for this part

SpecificationMCP6V02T-E/MD
Amplifier TypeZero-Drift
Current - Input Bias1 pA
Current - Output / Channel22 mA
Current - Supply300 µA
Gain Bandwidth Product1.3 MHz
Mounting TypeSurface Mount
Number of Circuits2
Operating Temperature (Max)125 °C
Operating Temperature (Min)-40 °C
Output TypeRail-to-Rail
Package / Case8-VDFN Exposed Pad
Package Length4 mm
Package Name8-DFN
Package Width4 mm
Slew Rate0.5 V/µs
Voltage - Input Offset2 µV
Voltage - Supply Span (Max)5.5 V
Voltage - Supply Span (Min)1.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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CAD

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