IPP062NE7N3GXKSA1

Obsolete

Infineon Technologies

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 75 V ; TO-220 PACKAGE; 6.2 MOHM;

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IPP062NE7N3GXKSA1

Obsolete

Infineon Technologies

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 75 V ; TO-220 PACKAGE; 6.2 MOHM;

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPP062NE7N3GXKSA1

Drain to Source Voltage (Vdss)	75 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	55 nC
Input Capacitance (Ciss) (Max) @ Vds	3840 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	136 W
Rds On (Max) @ Id, Vgs	6.2 mOhm
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	3.8 V

IPP062 Series

Part	Technology	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id [Max]	Power Dissipation (Max)	Package / Case	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	FET Type
Infineon Technologies IPP062NE7N3GXKSA1	MOSFET (Metal Oxide)	55 nC	20 V	3840 pF	3.8 V	136 W	TO-220-3	Through Hole	-55 °C	175 ░C	PG-TO220-3	10 V	75 V	6.2 mOhm	N-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

IPP062 Series

The 75V OptiMOS™ technology specializes in synchronous rectification applications. Based on the leading 80V technology these 75V products feature simultaneously lowest on-state resistances and superior switching performance.

Documents

Technical documentation and resources