BSL314PEH6327XTSA1

Obsolete

Infineon Technologies

MOSFET 2P-CH 30V 1.5A TSOP6-6

Search across all available documentation for this part.

Obsolete

Infineon Technologies

MOSFET 2P-CH 30V 1.5A TSOP6-6

Technical Specifications

Parameters and characteristics for this part

Specification	BSL314PEH6327XTSA1

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	1.5 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs [Max]	2.9 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	294 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power - Max [Max]	500 mW
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	140 mOhm
Supplier Device Package	PG-TSOP6-6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2 V

Part	Configuration	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	FET Feature	Drain to Source Voltage (Vdss)	Package / Case	Rds On (Max) @ Id, Vgs	Supplier Device Package	Grade	Input Capacitance (Ciss) (Max) @ Vds	Technology	Current - Continuous Drain (Id) @ 25°C	Qualification	Vgs(th) (Max) @ Id
Infineon Technologies BSL314PEH6327XTSA1	2 P-Channel	500 mW	2.9 nC	Surface Mount	-55 °C	150 °C	4.5V Drive Logic Level Gate	30 V	SOT-23-6 Thin TSOT-23-6	140 mOhm	PG-TSOP6-6	Automotive	294 pF	MOSFET (Metal Oxide)	1.5 A	AEC-Q101	2 V
Infineon Technologies BSL314PEL6327HTSA1	2 P-Channel	500 mW	2.9 nC	Surface Mount	-55 °C	150 °C	Logic Level Gate	30 V	SOT-23-6 Thin TSOT-23-6	140 mOhm	PG-TSOP6-6		294 pF	MOSFET (Metal Oxide)	1.5 A		2 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 30V 1.5A 500mW Surface Mount PG-TSOP6-6

Technical documentation and resources