IRLS3813TRLPBF

Obsolete

Infineon Technologies

STRONGIRFET™ N-CHANNEL POWER MOSFET ; D2PAK TO-263 PACKAGE; 1.95 MOHM;

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Obsolete

Infineon Technologies

STRONGIRFET™ N-CHANNEL POWER MOSFET ; D2PAK TO-263 PACKAGE; 1.95 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	IRLS3813TRLPBF

Current - Continuous Drain (Id) @ 25°C	160 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	83 nC
Input Capacitance (Ciss) (Max) @ Vds	8020 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	195 W
Rds On (Max) @ Id, Vgs [Max]	1.95 mOhm
Supplier Device Package	TO-263AB (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.35 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Supplier Device Package	Technology	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	FET Type	Package / Case
Infineon Technologies IRLS3813TRLPBF	10 V	20 V	30 V	8020 pF	83 nC	195 W	TO-263AB (D2PAK)	MOSFET (Metal Oxide)	160 A	-55 °C	150 °C	2.35 V	Surface Mount	1.95 mOhm	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 160A (Tc) 195W (Tc) Surface Mount TO-263AB (D2PAK)

Technical documentation and resources