ES2JA R3G

Unknown

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 2A DO214AC

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Unknown

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 2A DO214AC

Technical Specifications

Parameters and characteristics for this part

Specification	ES2JA R3G

Capacitance @ Vr, F	20 pF
Current - Average Rectified (Io)	2 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-214AC, SMA
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-214AC (SMA)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.7 V

Part	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Voltage - Forward (Vf) (Max) @ If [Max]	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Current - Average Rectified (Io)	Mounting Type	Supplier Device Package
Taiwan Semiconductor Corporation ES2JAL	200 mA 500 ns	150 °C	-55 °C	DO-221AC SMA Flat Leads	35 ns	600 V	Standard	1.7 V	1 µA	15 pF	2 A	Surface Mount	Thin SMA
Taiwan Semiconductor Corporation ES2JA R3G	200 mA 500 ns	150 °C	-55 °C	DO-214AC SMA	35 ns	600 V	Standard	1.7 V	10 µA	20 pF	2 A	Surface Mount	DO-214AC (SMA)
Taiwan Semiconductor Corporation ES2JFS	200 mA 500 ns	150 °C	-55 °C	SOD-128	35 ns	600 V	Standard	1.7 V	1 µA	15 pF	2 A	Surface Mount	SOD-128

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General part information

Diode 600 V 2A Surface Mount DO-214AC (SMA)

Technical documentation and resources