IXTQ86N20T
ActiveDISCMSFT NCHTRENCHGATE-GEN1 TO-3P (3)/ TUBE
IXTQ86N20T
ActiveDISCMSFT NCHTRENCHGATE-GEN1 TO-3P (3)/ TUBE
Description
General part information
IXTQ86N20 Series
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density
Technical Specifications
Parameters and characteristics for this part
| Specification | IXTQ86N20T |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 86 A |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 90 nC |
| Input Capacitance (Ciss) (Max) | 4500 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-3P-3, SC-65-3 |
| Package Name | TO-3P |
| Power Dissipation (Max) | 480 W |
| Rds On (Max) | 29 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) | 5 V |
Pricing
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