IXFR64N50Q3

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IXYS

MOSFET N-CH 500V 45A ISOPLUS247

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IXYS

MOSFET N-CH 500V 45A ISOPLUS247

Technical Specifications

Parameters and characteristics for this part

Specification	IXFR64N50Q3

Current - Continuous Drain (Id) @ 25°C	45 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	145 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	6950 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	500 W
Rds On (Max) @ Id, Vgs	95 mOhm
Supplier Device Package	ISOPLUS247™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	6.5 V

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Vgs (Max)	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Supplier Device Package	Rds On (Max) @ Id, Vgs	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id
IXYS IXFR64N50Q3	6950 pF	TO-247-3	45 A	500 W	-55 °C	150 °C	500 V	30 V	MOSFET (Metal Oxide)	145 nC	N-Channel	ISOPLUS247™	95 mOhm	Through Hole	10 V	6.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	300	$ 20.10

General part information

N-Channel 500 V 45A (Tc) 500W (Tc) Through Hole ISOPLUS247™

Technical documentation and resources

No documents available