RN1405,LF

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Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SMINI

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Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SMINI

Technical Specifications

Parameters and characteristics for this part

Specification	RN1405,LF

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	200 mW
Resistor - Base (R1)	2.2 kOhm
Resistor - Emitter Base (R2)	47000 Ohms
Supplier Device Package	S-Mini
Transistor Type	NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	Resistor - Base (R1)	Transistor Type	Power - Max [Max]	Mounting Type	Supplier Device Package	Package / Case	Resistor - Emitter Base (R2)	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
Toshiba Semiconductor and Storage RN1405,LF	500 nA	50 V	250 MHz	2.2 kOhm	NPN - Pre-Biased	200 mW	Surface Mount	S-Mini	SC-59 SOT-23-3 TO-236-3	47000 Ohms	300 mV	100 mA	80

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General part information

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 200 mW Surface Mount S-Mini

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