1T2G R0G

Unknown

Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 1A TS-1

Search across all available documentation for this part.

Unknown

Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 1A TS-1

Technical Specifications

Parameters and characteristics for this part

Specification	1T2G R0G

Capacitance @ Vr, F	10 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	T-18, Axial
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	TS-1
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Package / Case	Capacitance @ Vr, F	Mounting Type	Current - Average Rectified (Io)	Speed	Speed	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Supplier Device Package	Technology
Taiwan Semiconductor Corporation 1T2G R0G	T-18 Axial	10 pF	Through Hole	1 A	Standard Recovery >500ns	200 mA	1.1 V	100 V	150 °C	-55 °C	5 µA	TS-1	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 100 V 1A Through Hole TS-1

Technical documentation and resources

No documents available