TPMR6G S1G

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Taiwan Semiconductor Corporation

400V 1.2V@6A 35NS 6A TO-277A SWITCHING DIODES ROHS

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Taiwan Semiconductor Corporation

400V 1.2V@6A 35NS 6A TO-277A SWITCHING DIODES ROHS

Technical Specifications

Parameters and characteristics for this part

Specification	TPMR6G S1G

Capacitance @ Vr, F	60 pF
Current - Average Rectified (Io)	6 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	3-PowerDFN, TO-277
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-277A (SMPC)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	400 V
Voltage - Forward (Vf) (Max) @ If	1.2 V

Part	Package / Case	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Speed	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Reverse Recovery Time (trr)
Taiwan Semiconductor Corporation TPMR6J	3-PowerDFN TO-277	Surface Mount	600 V	60 pF	6 A	1.8 V	TO-277A (SMPC)	200 mA 500 ns	10 µA	175 ░C	-55 C	Standard	40 ns
Taiwan Semiconductor Corporation TPMR6G S1G	3-PowerDFN TO-277	Surface Mount	400 V	60 pF	6 A	1.2 V	TO-277A (SMPC)	200 mA 500 ns	10 µA	175 ░C	-55 C	Standard	35 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 400 V 6A Surface Mount TO-277A (SMPC)

Technical documentation and resources

No documents available